In the field of photovoltaics, in order to meet the market's requirements for lower costs and higher productivity, the research and industrialization of micron diamond wire technology will further reduce the thickness of silicon wafers and reduce material losses in the cutting process, thereby reducing the solar power Consumption of silicon materials.
At present, raw materials account for almost one-third of the cost of crystalline silicon solar cells. Therefore, the micro-diamond wire technology plays a vital role in reducing the cost per watt of solar energy and eventually pushing it to reach the grid parity. The latest state-of-the-art micron diamond wire technology brings many innovations that will increase productivity and reduce silicon material consumption through thinner silicon wafers. Electrodeposited micron diamond wires have been studied in depth abroad, and domestic research in this area is still in its infancy.
Making silicon wafers thinner also reduces silicon raw material consumption. In the past ten years, the thickness of photovoltaic silicon wafers has been reduced from 330 μm to the current range of 180-220 μm. This trend will continue, and the thickness of silicon wafers will become 100 μm. The benefits of reducing the thickness of silicon wafers are amazing. From 330 μm to 130 μm, photovoltaic cell manufacturers can reduce overall silicon raw material consumption by up to 60%. Ultra-thin silicon wafers present additional challenges to wire saw technology, as the production process is much more difficult. In addition to the mechanical brittleness of the silicon wafer, if the wire saw process is not precisely controlled, fine cracks and bends will have a negative impact on product yield. Ultra-thin wafer wire saw systems must be able to precisely control process linearity, cutting line speed and pressure, and cutting coolant.
Regardless of the thickness of the wafer, manufacturers of crystalline silicon photovoltaic cells place extremely high demands on the quality of the wafer. Silicon wafers must not have surface damage (micro cracks, wire saw marks), topographical defects (bending, unevenness, uneven thickness) should be minimized, and the requirements for additional back-end processing such as polishing should be minimized.
In order to meet the market's requirements for lower costs and higher productivity, the new generation of wire saws must increase cutting speeds and thus increase cutting loads. Thinner cutting lines and thinner silicon wafers increase productivity. At the same time, advanced process controls can manage cutting line tension to maintain cutting line robustness. Higher productivity wire saw systems can reduce the number of machines with the same silicon wafer output. As a result, manufacturers can significantly reduce equipment, operator and maintenance costs
Compared with the processing technology of wire cutting by free abrasive, micron diamond wire has the following advantages:
1) Compared with the traditional silicon carbide abrasive cutting, the micron diamond wire has high efficiency, long life, high cutting accuracy, and good silicon wafer quality.
2) Replacing silicon carbide abrasives with micron diamond wires will make it easier to recover polysilicon from waste residue. According to statistics, about 40% of the polysilicon has not been used, wasted in waste residue, and it is difficult to separate it from silicon carbide. If diamond wire cutting is used, polysilicon can be separated and recycled by means of combustion.
3) Water-soluble coolant can be used for easy recycling.
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